Solar cells | electrical engineering | Arizona State University
1)A thick slab of p-type Si (many times thicker than the diffusion length Ln ) with 0.52 Ωcm bulk resistivity is illuminated. For a uniform generation profile in the slab of 10 19 electron-hole pairs/(cm 3 s), if the minority carrier lifetime is 500 µs, and the surface recombination velocity is 200 cm/s, calculate the following: (a) Using the charts below, what are the doping […]
